bas 70-07 oct-07-1999 1 silicon schottky diodes ? general-purpose diode for high-speed switching ? circuit protection ? voltage clamping ? high-level detecting and mixing vps05178 2 1 3 4 32 eha07008 1 4 type marking pin configuration package bas 70-07 77s 1 = c1 2 = c2 3 = a2 4 = a1 sot-143 maximum ratings parameter symbol value unit diode reverse voltage v r 70 v forward current i f 70 ma surge forward current, t 10 ms i fsm 100 total power dissipation , t s 66 c p tot 250 mw junction temperature t j 150 c operating temperature range t op -55 ... 150 storage temperature t st g -55 ...150 maximum ratings junction - ambient 1) r thja 405 k/w junction - soldering point r thjs 335 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bas 70-07 oct-07-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values min. max. typ. dc characteristics 70 - breakdown voltage i (br) = 10 a - v (br) v reverse current v r = 50 v v r = 70 v i r - - - - 0.1 10 a forward voltage i f = 1 ma i f = 10 ma i f = 15 ma v f - - - 375 705 880 410 750 1000 mv ac characteristics diode capacitance v r = 0 , f = 1 mhz c t - 1.6 2 pf charge carrier life time i f = 25 ma - - 100 ps differential forward resistance i f = 10 ma, f = 10 khz r f - 30 - ?
bas 70-07 oct-07-1999 3 forward current i f = f ( v f ) t a = parameter 0.0 ehb00042 bas 70w/bas 170w v f f 10 -1 -2 10 0 10 1 10 2 10 ma 0.5 1.0 v 1.5 t a = -40 c 25 c 85 c 150 c reverse current i r = f ( v r ) t a = parameter 0 ehb00043 v r r 10 -1 -3 10 0 10 1 10 2 10 a 10 -2 20 40 60 v 80 t a = 150 c 85 c 25 c bas 70w/bas 170w diode capacitance c t = f ( v r ) f = 1mhz 0 0.0 ehb00044 c v r t 20 40 60 v 80 0.5 1.0 1.5 pf 2.0 bas 70w/bas 170w differential forward resistance r f = f ( i f ) f = 10 khz 0.1 10 ehb00045 r f 1 10 ma 100 f 0 1 10 2 10 3 10 ? bas 70w/bas 170w
bas 70-07 oct-07-1999 4 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 0 ehb00151 bas 70... f a t ; t s 20 40 60 80 ma 100 50 100 ?c 150 t a s t
|
